Title :
Modeling the threshold voltage instability in SiC MOSFETs at high operating temperature
Author :
Kikuchi, Takashi ; Ciappa, M.
Author_Institution :
Corp. Manuf. Eng. Center, Toshiba Corp., Yokohama, Japan
Abstract :
The threshold voltage instability is a main reliability issue of Silicon Carbide MOS transistors submitted to gate bias stress. A new time and temperature-dependent TCAD model based on phonon-assisted tunneling is proposed. The results are compared with a previously developed temperature-independent model and with experimental data.
Keywords :
MOSFET; phonons; silicon compounds; tunnelling; wide band gap semiconductors; MOS transistors; MOSFET; SiC; gate bias stress; high operating temperature; phonon-assisted tunneling; temperature-dependent TCAD model; threshold voltage instability; time-dependent TCAD model; Degradation; Electron traps; Phonons; Silicon carbide; Stress; Temperature measurement; Time measurement; Silicon Carbide MOS; TCAD model; gate bias stress; phonon-assisted tunneling; threshold voltage instability;
Conference_Titel :
Reliability Physics Symposium, 2014 IEEE International
Conference_Location :
Waikoloa, HI
DOI :
10.1109/IRPS.2014.6860591
