DocumentCode
1866749
Title
An efficiency of 18.88% in selective emitter solar cells by metal pattern optimization
Author
Oh, Dong-Joon ; Shim, Ji-Myung ; Cho, Kyeong-Yeon ; Lee, Eun-Joo ; Lee, Hyun-Woo ; Choi, Jun-Young ; Kim, Ji-Sun ; Shin, Jeong-Eun ; Kong, Ji-Hyun ; Seo, Jae-Keun ; Lee, Soo-Hong ; Lee, Hae-Seok
Author_Institution
R&D Center, Shinsung Holdings Seongnam-Si, Seongnam, South Korea
fYear
2011
fDate
19-24 June 2011
Abstract
A high efficiency (η~18.88 %) mono-crystalline Si solar cell (Area=15.6 × 15.6 cm2) with a selective emitter structure used in the conventional diffusion process (POCl3) and the screen printed contact is presented in this paper. In particular, we focus on the improvement of fill factor (FF) by the front metal Ag portion and aspect ratio optimization. As a result, the front metal portion of 5.15% (printing thrice) represents the best in the FF of 77.68%. The fabricated solar cell with a selective emitter has the portion of high doping concentration (30 ohm/sq.) to just below the metal contact and the shallow emitter (80 ~ 90 ohm/sq.) of the rest of contacts. As a result, our selective emitter solar cell is accomplished by the Eff 18.88% when the front metal portion of 5.15% is applied during its printing thrice.
Keywords
electrical contacts; elemental semiconductors; optimisation; printing; silicon; solar cells; FF; aspect ratio optimization; diffusion process; efficiency 18.88 percent; fill factor; front metal portion; high doping concentration; metal contact; metal pattern optimization; monocrystalline solar cell; screen printed contact; selective emitter solar cell; shallow emitter; Metals; Printing; Three dimensional displays;
fLanguage
English
Publisher
ieee
Conference_Titel
Photovoltaic Specialists Conference (PVSC), 2011 37th IEEE
Conference_Location
Seattle, WA
ISSN
0160-8371
Print_ISBN
978-1-4244-9966-3
Type
conf
DOI
10.1109/PVSC.2011.6186391
Filename
6186391
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