• DocumentCode
    186682
  • Title

    Scaling and reliability of NAND flash devices

  • Author

    Youngwoo Park ; Jaeduk Lee ; Seong Soon Cho ; Gyoyoung Jin ; EunSeung Jung

  • Author_Institution
    Semicond. R&D Center, Samsung Electron. Co. Ltd., Hwasung, South Korea
  • fYear
    2014
  • fDate
    1-5 June 2014
  • Abstract
    Numerous scaling limitations of NAND flash memory have arisen due to the intrinsic nature of the operational principle of NAND flash memory and those limitations eventually lead to a paradigm shift in the NAND flash technology from the planar cell to the vertical NAND cell. In this paper, the limitations of scaling which induce the evolution of the NAND cell as well as the current trends of NAND technology are reviewed.
  • Keywords
    NAND circuits; flash memories; integrated circuit design; integrated circuit reliability; NAND flash devices; NAND flash memory; NAND flash technology; planar cell; reliability; scaling limitations; vertical NAND cell; Computer architecture; Flash memories; Interference; Logic gates; Microprocessors; Nonvolatile memory; Reliability; NAND Flash memory; planar NAND; reliability; scaling down; vertical NAND;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Reliability Physics Symposium, 2014 IEEE International
  • Conference_Location
    Waikoloa, HI
  • Type

    conf

  • DOI
    10.1109/IRPS.2014.6860599
  • Filename
    6860599
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=186682