Title :
Scaling and reliability of NAND flash devices
Author :
Youngwoo Park ; Jaeduk Lee ; Seong Soon Cho ; Gyoyoung Jin ; EunSeung Jung
Author_Institution :
Semicond. R&D Center, Samsung Electron. Co. Ltd., Hwasung, South Korea
Abstract :
Numerous scaling limitations of NAND flash memory have arisen due to the intrinsic nature of the operational principle of NAND flash memory and those limitations eventually lead to a paradigm shift in the NAND flash technology from the planar cell to the vertical NAND cell. In this paper, the limitations of scaling which induce the evolution of the NAND cell as well as the current trends of NAND technology are reviewed.
Keywords :
NAND circuits; flash memories; integrated circuit design; integrated circuit reliability; NAND flash devices; NAND flash memory; NAND flash technology; planar cell; reliability; scaling limitations; vertical NAND cell; Computer architecture; Flash memories; Interference; Logic gates; Microprocessors; Nonvolatile memory; Reliability; NAND Flash memory; planar NAND; reliability; scaling down; vertical NAND;
Conference_Titel :
Reliability Physics Symposium, 2014 IEEE International
Conference_Location :
Waikoloa, HI
DOI :
10.1109/IRPS.2014.6860599
