Title :
A new spectral approach to modeling charge trapping/detrapping in NAND Flash memories
Author :
Paolucci, Giovanni M. ; Monzio Compagnoni, Christian ; Miccoli, Carmine ; Bertuccio, M. ; Beltrami, S. ; Barber, J. ; Kessenich, J. ; Lacaita, Andrea L. ; Spinelli, Alessandro S. ; Visconti, Angelo
Author_Institution :
Dipt. di Elettron., Inf. e Bioingegneria, Inf. e Bioingegneria, Vinci, Italy
Abstract :
We present a semi-analytical model for the description of charge trapping and detrapping phenomena occurring during cycling and idle periods in NAND Flash memories. The model is based on a statistical distribution of detrapping time constants that is affected by the composition of cycles and idle periods and accounts for charge discreteness, statistical charge capture and emission and statistical distribution of the threshold-voltage shift due to single detrapping events. The model can reproduce the experimental data under different conditions and allows to develop and monitor accelerated schemes able to mimic realistic on-field usage of the memory device.
Keywords :
NAND circuits; flash memories; integrated circuit modelling; , statistical charge capture; NAND Flash memories; charge discreteness; charge trapping-detrapping modeling; cycling period; detrapping time constant; idle period; semianalytical model; single-detrapping events; spectral approach; statistical charge emission; statistical distribution; threshold-voltage shift; Electron traps; Flash memories; program/erase cycling; semiconductor device modeling; semiconductor device reliability;
Conference_Titel :
Reliability Physics Symposium, 2014 IEEE International
Conference_Location :
Waikoloa, HI
DOI :
10.1109/IRPS.2014.6860600
