Title :
Lowinput voltage charge pump with dynamic body biasing
Author :
Yin Li ; Misra, Mano ; Gregori, Stefano
Author_Institution :
Sch. of Eng., Univ. of Guelph, Guelph, ON, Canada
fDate :
April 29 2012-May 2 2012
Abstract :
This paper presents a charge pump based on voltage doublers, which can operate at very low input voltages. The proposed design uses dedicated boosting circuits and dynamic body biasing of the pass transistors. Driving capability, voltage gain, and conversion efficiency are demonstrated through simulations.
Keywords :
MOSFET; charge pump circuits; NMOS pass transistor; PMOS pass transistor; boosting circuit; conversion efficiency; driving capability; low-input voltage charge pump; pass transistor dynamic body biasing; voltage doubler; voltage gain; Boosting; Capacitors; Charge pumps; Logic gates; Threshold voltage; Transistors; Voltage control; Charge pump; forward body bias; voltage multiplier;
Conference_Titel :
Electrical & Computer Engineering (CCECE), 2012 25th IEEE Canadian Conference on
Conference_Location :
Montreal, QC
Print_ISBN :
978-1-4673-1431-2
Electronic_ISBN :
0840-7789
DOI :
10.1109/CCECE.2012.6334881
