DocumentCode :
18669
Title :
Hamming SEC-DAED and Extended Hamming SEC-DED-TAED Codes Through Selective Shortening and Bit Placement
Author :
Sanchez-Macian, Alfonso ; Reviriego, Pedro ; Maestro, Juan Antonio
Author_Institution :
Univ. Antonio de Nebrija, Madrid, Spain
Volume :
14
Issue :
1
fYear :
2014
fDate :
Mar-14
Firstpage :
574
Lastpage :
576
Abstract :
Radiation particles can impact registers or memories creating soft errors. These errors can modify more than one bit causing a multiple cell upset (MCU) which consists of errors in registers or memory cells that are physically close. These MCUs can affect a single word, producing adjacent bit errors. Hamming codes are commonly used to protect memories or registers from soft errors. However, when multiple errors occur, a Hamming code may not detect them. In this letter, single-error-correction double adjacent error detection Hamming codes are presented for 16-, 32-, and 64-bit words. Additionally, single-error-correction double-error-detection triple adjacent error detection codes based on extended Hamming are presented as well. The enhanced detection is achieved by performing a selective shortening and reordering of the Hamming matrix so adjacent errors result in a syndrome that does not match that of any single error. These codes will help in the detection of MCUs in SRAM memory designs.
Keywords :
Hamming codes; SRAM chips; error correction codes; error detection codes; matrix algebra; radiation hardening (electronics); Hamming code; Hamming matrix; SRAM memory design; adjacent bit error; bit placement; double adjacent error detection code; extended Hamming SEC-DED-TAED code; memory cells; multiple cell upset; radiation particle; registers; selective shortening; single-error-correction code; soft error; storage capacity 16 bit; storage capacity 32 bit; storage capacity 64 bit; Algorithm design and analysis; Error correction; Error correction codes; Mathematical model; Parity check codes; Random access memory; Registers; Error correction codes (ECCs); Hamming codes; memory; multiple cell upsets (MCUs);
fLanguage :
English
Journal_Title :
Device and Materials Reliability, IEEE Transactions on
Publisher :
ieee
ISSN :
1530-4388
Type :
jour
DOI :
10.1109/TDMR.2012.2204753
Filename :
6217302
Link To Document :
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