DocumentCode
1866934
Title
The demonstrations and discussion for static/read/write noise margin (SNM/RNM/WNM) via Nanoprobing to SRAM FA applications
Author
LiLung Lai ; Nan Li ; Zhang, Oscar ; Bao, Tim
Author_Institution
Semicond. Manuf. Int. (Shanghai) Corp, Shanghai, China
fYear
2015
fDate
June 29 2015-July 2 2015
Firstpage
26
Lastpage
30
Abstract
Nanoprobing techniques have become standard analytical way for real-world device analysis in the modern semiconductor FA lab. The four or six probing of Static noise margin (SNM) and Read noise margin (RNM) could be useful for the SRAM FA. It can justify soft fail and marginal fail to single-bit failure. The in-depth mechanism, completed operation and valuable application are introduced in the content.
Keywords
SRAM chips; failure analysis; probes; SRAM FA applications; marginal fail; modern semiconductor FA lab; nanoprobing; read noise margin; real-world device analysis; single-bit failure; soft fail; static noise margin; Computed tomography; Current measurement; MOS devices; Nanoscale devices; Noise; Random access memory; Semiconductor device measurement;
fLanguage
English
Publisher
ieee
Conference_Titel
Physical and Failure Analysis of Integrated Circuits (IPFA), 2015 IEEE 22nd International Symposium on the
Conference_Location
Hsinchu
Type
conf
DOI
10.1109/IPFA.2015.7224324
Filename
7224324
Link To Document