Title :
HfO/sub 2/ and lanthanide-doped HfO/sub 2/ MIM capacitors for RF/mixed IC applications
Author :
Sun Jung Kim ; Byung Jin Cho ; Ming-Fu Li ; Chunxiang Zhu ; Chin, Alvin ; Dim-Lee Kwong
Author_Institution :
Dept. of Electr. & Comput. Eng., Nat. Univ. of Singapore, Singapore
Abstract :
We demonstrate high quality HfO/sub 2/-metal-insulator-metal (MIM) capacitors with a high capacitance of 4.7 fF/cm/sup 2/ and a leakage current density of less than 10/sup -8/ A/cm/sup 2/, meeting ITRS requirement for analog precision capacitor applications. In addition, we demonstrate that doping HfO/sub 2/ with Lanthanide (Tb) at an optimum concentration improves both voltage linearity and leakage current density of HfO/sub 2/ MIM capacitor, allowing further reduction of insulator thickness and achieving a capacitance density of 13.3 fF//spl mu/m/sup 2/ with leakage current meeting requirements for RF bypass capacitors applications. These values are superior to that reported in the literature, suggesting the potential use of these dielectrics for future RF/mixed signal IC applications.
Keywords :
MIM devices; capacitors; current density; hafnium compounds; leakage currents; mixed analogue-digital integrated circuits; terbium; HfO/sub 2/ doping; HfO/sub 2/-metal-insulator-metal capacitors; HfO/sub 2/:Tb; RF bypass capacitors applications; RF-mixed IC applications; analog precision capacitor applications; capacitance density; dielectrics; insulator thickness; lanthanide doped HfO/sub 2/ MIM capacitors; leakage current density; optimum concentration; voltage linearity; Capacitance; Dielectrics and electrical insulation; Doping; Hafnium oxide; Leakage current; Linearity; MIM capacitors; RF signals; Radio frequency; Voltage;
Conference_Titel :
VLSI Technology, 2003. Digest of Technical Papers. 2003 Symposium on
Conference_Location :
Kyoto, Japan
Print_ISBN :
4-89114-033-X
DOI :
10.1109/VLSIT.2003.1221094
