Title :
A Study of unique galvanic failure due to interaction with well structure
Author :
Yi, W.B. ; Phoong, B.F. ; Sheng, H.F. ; Wang, D.X. ; Wee, T.L. ; Wang, Z.H. ; Cong, H. ; Choi, S.G. ; Tan, J.B.
Author_Institution :
GLOBALFOUNDRIES Singapore Pte. Ltd., Singapore, Singapore
fDate :
June 29 2015-July 2 2015
Abstract :
In this paper, a thorough investigation on a memory yield detractor due to metal void is presented. The metal void was found to have a strong dependency on isolated well size. It was formed due to galvanic effect. The failure mechanism in this unique case was found due to a potential developed from charges on the wafer surface and opposing charges trapped in the well. The post-etch solvent acted as the electrolyte and caused copper to migrate. This study includes a few counter-measures to address the issue.
Keywords :
chemical mechanical polishing; copper; electromigration; semiconductor device metallisation; Cu; failure mechanism; galvanic effect; galvanic failure; memory yield detractor; metal void; post-etch solvent; wafer surface; well structure; Copper; Corrosion; Electric potential; Slurries; Surface cleaning;
Conference_Titel :
Physical and Failure Analysis of Integrated Circuits (IPFA), 2015 IEEE 22nd International Symposium on the
Conference_Location :
Hsinchu
DOI :
10.1109/IPFA.2015.7224327
