Title :
Thermally robust Ta-doped Ni SALICIDE process promising for sub-50 nm CMOSFETs
Author :
Sun, M.C. ; Kim, M.J. ; Ku, J.-H. ; Roh, K.J. ; Kim, C.S. ; Youn, S.P. ; Jung, Seung-Won ; Choi, S. ; Lee, N.I. ; Kang, H.-K. ; Suh, K.P.
Author_Institution :
Syst. LSI Div., Samsung Electron. Co Ltd, Yongin, South Korea
Abstract :
For sub-50 nm device application, Self-Aligned siLICIDE (SALICIDE) process by NiTa alloy has been developed for the first time. Use of NiTa-alloy makes nickel silicide on 50 nm gate thermally-robust up to 600/spl deg/C during device fabrication. NiTa SALICIDE process can also achieve excellent value and distribution of sheet resistance on 30 nm gate as well as low junction leakage current compared to Co SALICIDE. Furthermore, the drive current of PMOS is greatly increased. As a result, high-performance 90 nm MOSFETs is successfully integrated with NiTa SALICIDE process.
Keywords :
MOSFET; elemental semiconductors; leakage currents; nickel alloys; silicon; tantalum alloys; 30 nm; 50 nm; 600 degC; 90 nm; CMOSFETs; NiSi:Ta-Si; NiTa alloy; PMOS drive current; Ta doped Ni salicide process; junction leakage current; nickel silicide compounds; sheet resistance; thermally robust; CMOSFETs; MOSFETs; Nickel; Robustness; Semiconductor films; Silicides; Silicon; Sun; Temperature; Thermal stability;
Conference_Titel :
VLSI Technology, 2003. Digest of Technical Papers. 2003 Symposium on
Conference_Location :
Kyoto, Japan
Print_ISBN :
4-89114-033-X
DOI :
10.1109/VLSIT.2003.1221096
