Title :
Effect of pre-CMP annealing on TSV pumping in thermal budget and reliability test
Author :
Jing, X. ; Lee, U.-H. ; Xu, C. ; Niu, Z. ; Hao, H. ; Bae, J.-Y. ; Won, J. ; Zhang, W.
Author_Institution :
Nat. Center for Adv. Packaging, Wuxi, China
fDate :
June 29 2015-July 2 2015
Abstract :
Cu pumping is a potential reliability issue for through silicon via (TSV) based 2.5D and 3D integration, due to the CTE mismatch between silicon and copper. In this paper, we report the reliability assessment of Cu pumping treated at different annealing conditions. Cu pumping is simulated by finite element method to compare the effect of the overburden layer. The pumping of TSVs having a diameter of 10 μm and a depth of 100 μm has been fabricated and characterized using a white light optical profiler. According to the thermal budget evaluation and TC, HTS and HAST test results, higher annealing temperature is beneficial to control the Cu pumping and improve the TSV reliability.
Keywords :
annealing; chemical mechanical polishing; copper; finite element analysis; integrated circuit reliability; integrated circuit testing; pumps; silicon; thermal analysis; three-dimensional integrated circuits; 2.5D integration; 3D integration; CTE mismatch; Cu; HAST test; HTS; Si; TC; TSV pumping; TSV reliability; annealing temperature; chemical mechanical polish; coefficient of thermal expansion; copper; depth 100 mum; finite element method; high temperature storage; humidity accelerated stress test; preCMP annealing; reliability assessment; reliability test; size 10 mum; thermal budget evaluation; thermal cycling; through silicon via; white light optical profiler; Annealing; Copper; Finite element analysis; High-temperature superconductors; Reliability; Silicon; Through-silicon vias;
Conference_Titel :
Physical and Failure Analysis of Integrated Circuits (IPFA), 2015 IEEE 22nd International Symposium on the
Conference_Location :
Hsinchu
DOI :
10.1109/IPFA.2015.7224329
