Title :
Highly manufacturable 90 nm NOR flash technology with 0.081 /spl mu/m/sup 2/ cell size
Author :
Yunheub Song ; Sangeun Lee ; Taeyong Kim ; Jungin Han ; Hungyu Lee ; Sunyoung Kim ; Junghwan Park ; Sewoong Park ; Joonhuk Choi ; Jaewoo Kim ; Daeyup Lee ; Myoungkwan Cho ; Kyucharn Park ; Kinam Kim
Author_Institution :
Semicond. R & D Center, Samsung Electron. Co Ltd., Yongin, South Korea
Abstract :
A manufacturable 90 nm NOR Flash technology has been developed with extremely small cell size of 0.081/spl mu/m/sup 2/, which is the smallest cell size of NOR cell, for high density code storage memory featuring with low voltage operation. The small cell size of 0.081/spl mu/m/sup 2/ is successfully achieved with three key main technologies such as an advanced KrF lithography with off-axis illumination system, appropriate dielectric thin film and junction scaling and optimized oxidation encroachment of inter-poly oxide nitride oxide (ONO) and tunnel oxide.
Keywords :
flash memories; lithography; logic arrays; logic gates; oxidation; 90 nm; KrF lithography; NOR cell; NOR flash memories; dielectric thin film; low voltage operation; memory storage; oxidation; Appropriate technology; Dielectric thin films; Doping; Lighting; Lithography; Low voltage; Manufacturing; Nonvolatile memory; Oxidation; Synthetic aperture sonar;
Conference_Titel :
VLSI Technology, 2003. Digest of Technical Papers. 2003 Symposium on
Conference_Location :
Kyoto, Japan
Print_ISBN :
4-89114-033-X
DOI :
10.1109/VLSIT.2003.1221101
