DocumentCode
1867245
Title
New buried bit-line NAND (BiNAND) Flash memory for data storage
Author
Sean Chang ; Evans Yang ; Terry Chen ; Lizzy Huang ; Bennett Hsu ; Da Sung ; Jiang-Chi Duh ; Chi-Wei Hung ; Vincent Huang ; Ya-Ching King ; Chih-Hsiun Chu ; Charles Ching-Hsiang Hsu
Author_Institution
eMemory Technol. Inc., Hsin-Chu, Taiwan
fYear
2003
fDate
10-12 June 2003
Firstpage
95
Lastpage
96
Abstract
Buried bit-line NAND (BiNAND) Flash is newly proposed to achieve low voltage programming/erase and facilitate multi-level storage. Due to the buried bit-line, the required high program/erase voltage for FN tunneling can be divided between word-line and bit-line and therefore minimizes the disturbance. The negative programmed threshold voltage also facilitates the operation of multi-level storage due to high array conductivity.
Keywords
flash memories; logic gates; Fowler-Nordheim tunneling; array conductivity; buried bit-line NAND; data storage; flash memory; low voltage erasing; low voltage programming; multilevel storage; threshold voltage; word-line; Conductivity; Electrons; Flash memory; Isolation technology; Low voltage; Plugs; Stability; Threshold voltage; Tunneling; Upper bound;
fLanguage
English
Publisher
ieee
Conference_Titel
VLSI Technology, 2003. Digest of Technical Papers. 2003 Symposium on
Conference_Location
Kyoto, Japan
Print_ISBN
4-89114-033-X
Type
conf
DOI
10.1109/VLSIT.2003.1221103
Filename
1221103
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