A unified model to understand degradation of a-InGaZnO TFTs under various gate bias stresses with or without light illumination

Author

Mingxiang Wang ; Jie Xu ; Huaisheng Wang ; Qi Shan

Author_Institution

Dept. of Microelectron., Soochow Univ., Suzhou, China

fYear

2015

fDate

June 29 2015-July 2 2015

Firstpage

76

Lastpage

79

Abstract

A unified model is proposed to consistently explain the degradation behaviors of a-IGZO TFTs under different light illumination and gate bias stress conditions. In the proposed model, photo-excited double ionized oxygen vacancies (V_o²⁺) traps and their transportation under the electric field are two key factors that cause the threshold voltage (V_th) shift of TFTs. Additional traps generated during the formation of V_o²⁺ also deteriorate the subthreshold characteristics.

Keywords

amorphous semiconductors; gallium compounds; indium compounds; photoexcitation; semiconductor device models; thin film transistors; vacancies (crystal); zinc compounds; InGaZnO; a-IGZO TFT; degradation behaviors; electric field; gate bias stress conditions; light illumination conditions; photo-excited double ionized oxygen vacancies traps; threshold voltage shift; Charge carrier processes; Degradation; Lighting; Logic gates; Stress; Thin film transistors; Transportation; InGaZnO; charge trapping; gate bias stress; light illumination; oxygen vacancy; thin film transistors;

fLanguage

English

Publisher

ieee

Conference_Titel

Physical and Failure Analysis of Integrated Circuits (IPFA), 2015 IEEE 22nd International Symposium on the

Conference_Location

Hsinchu

Type

conf

DOI

10.1109/IPFA.2015.7224337

Filename

7224337