• DocumentCode
    1867295
  • Title

    Comparison of solar cell device thermal degradation and low-irradiance performance

  • Author

    Feist, Rebekah ; Mills, Michael ; Thompson, Kirk ; Ramesh, Narayan

  • Author_Institution
    Dow Solar Solutions, Dow Chem. Co., Midland, MI, USA
  • fYear
    2011
  • fDate
    19-24 June 2011
  • Abstract
    The thermal degradation, low-irradiance performance, IV and EQE characteristics of CuInGaSe2 (CIGS), c-Si, and GaAs photovoltaic devices are presented. Typically thin-film polycrystalline materials are hypothesized to be advantaged over monocrystalline materials due to their lower thermal degradation coefficient and improved low-irradiance performance. In this work the performance of these different solar cell materials was evaluated with the intent being to determine if these hypothesized performance distinctions exist. Such differences could indicate that solar cells exhibit optimum performance in specific climates.
  • Keywords
    III-V semiconductors; copper compounds; elemental semiconductors; gallium arsenide; gallium compounds; indium compounds; silicon; solar cells; ternary semiconductors; thin films; CuInGaSe2; EQE characteristic; GaAs; IV characteristics; Si; hypothesized performance distinction; low-irradiance performance; lower thermal degradation coefficient; monocrystalline material; photovoltaic solar cell device thermal degradation; solar cell material; thin-film polycrystalline material; Degradation; Gallium arsenide; Performance evaluation; Photovoltaic cells; Temperature measurement; Thermal degradation;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Photovoltaic Specialists Conference (PVSC), 2011 37th IEEE
  • Conference_Location
    Seattle, WA
  • ISSN
    0160-8371
  • Print_ISBN
    978-1-4244-9966-3
  • Type

    conf

  • DOI
    10.1109/PVSC.2011.6186414
  • Filename
    6186414