Title :
Strained silicon NMOS with nickel-silicide metal gate
Author :
Qi Xiang ; Jung-Suk Goo ; Pan, J. ; Bin Yu ; Ahmed, S. ; John Zhang ; Ming-Ren Lin
Author_Institution :
Technol. Dev. Group, Adv. Micro Devices Inc., Sunnyvale, CA, USA
Abstract :
Strained Si NMOS transistors with Lgate down to 35 nm were fabricated using NiSi as a metal gate electrode material for the first time. Compared to poly gate devices, NiSi metal gate devices showed further enhanced performance with good control of short channel effects and no degradation in gate oxide integrity.
Keywords :
MOSFET; elemental semiconductors; nickel compounds; silicon; 35 nm; NiSi; Si; channel effects; nickel-silicide metal gate electrode; poly gate devices; strained silicon NMOS transistors; Degradation; Doping; Electrodes; Electron mobility; Germanium silicon alloys; MOS devices; Silicides; Silicon germanium; Strain control; Substrates;
Conference_Titel :
VLSI Technology, 2003. Digest of Technical Papers. 2003 Symposium on
Conference_Location :
Kyoto, Japan
Print_ISBN :
4-89114-033-X
DOI :
10.1109/VLSIT.2003.1221106
