A unified drain current model for poly-Si and a-InGaZnO TFTs under different temperatures

Author

Zhiyuan Han ; Mingxing Wang ; Yong Wu ; Haiqin Zhou ; Jin He

Author_Institution

Dept. of Microelectron., Soochow Univ., Suzhou, China

fYear

2015

fDate

June 29 2015-July 2 2015

Firstpage

80

Lastpage

83

Abstract

Based on the Pao-Sah model, and the assumption of Gaussian and exponential distribution for the density of states respectively for the deep and tail traps in the band gap, a unified drain current is derived, which can fit experimental IV characteristics at different temperatures for both a-InGaZnO TFTs and poly-Si TFTs based on different technologies, with a set of model parameters independent of temperature.

Keywords

Gaussian distribution; II-VI semiconductors; amorphous semiconductors; exponential distribution; gallium compounds; indium compounds; semiconductor device models; silicon; thermal analysis; thin film transistors; wide band gap semiconductors; zinc compounds; Gaussian distribution; IV characteristics; InGaZnO; Pao-Sah model; Si; TFT; band gap; exponential distribution; thin-film transistor; unified drain current model; Electron traps; Fitting; Logic gates; Photonic band gap; Temperature distribution; Thin film transistors;

fLanguage

English

Publisher

ieee

Conference_Titel

Physical and Failure Analysis of Integrated Circuits (IPFA), 2015 IEEE 22nd International Symposium on the

Conference_Location

Hsinchu

Type

conf

DOI

10.1109/IPFA.2015.7224338

Filename

7224338