Title :
Stability of High performance p-type SnO TFTs
Author :
Zhong, C.W. ; Tsai, H.Y. ; Lin, H.C. ; Liu, K.C. ; Huang, T.Y.
Author_Institution :
Dept. of Electron. Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan
fDate :
June 29 2015-July 2 2015
Abstract :
High performance p-type SnO TFTs were fabricated and characterized in this work. Owing to thermal oxygen annealing process, the originally tin-rich oxide film was transformed into a polycrystalline SnO, resulting in decent field-effect mobility and high on/off current ratio. Electrical stability was evaluated by examining the threshold voltage shift under negative bias stresses at different stress times. A scenario considering the passivation/de-passivation of acceptor defects in the channel and the hole trapping of the gate oxide is proposed to explain the observed instability of the SnO TFTs.
Keywords :
annealing; carrier mobility; hole traps; passivation; semiconductor device reliability; thin film transistors; tin compounds; SnO; acceptor passivation; field-effect mobility; hole trapping; negative bias stress; p-type SnO TFT; polycrystalline SnO; thermal oxygen annealing process; threshold voltage shift; tin-rich oxide film; Annealing; Charge carrier processes; Films; Logic gates; Stress; Thermal stability; Tin;
Conference_Titel :
Physical and Failure Analysis of Integrated Circuits (IPFA), 2015 IEEE 22nd International Symposium on the
Conference_Location :
Hsinchu
DOI :
10.1109/IPFA.2015.7224339
