Title :
A compact coplanar W-band variable gain amplifier MMIC with wide control range using dual-gate HEMTs
Author :
Tessmann, A. ; Haydl, W.H. ; Krems, T. ; Neumann, M. ; Massler, H. ; Verweyen, L. ; Hulsmann, A. ; Schlechtweg, M.
Author_Institution :
Fraunhofer Inst. for Appl. Solid State Phys. IAF, Freiburg, Germany
Abstract :
A W-band variable gain amplifies MMIC with 37 dB gain at 94 GHz and a gain control range of over 70 dB has been developed. The circuit consists of four dual-gate HEMT stages, using a 0.15 /spl mu/m AlGaAs-InGaAs-GaAs PM-HEMT technology. The chip was realized in coplanar technology and requires an area of only 1/spl times/3 mm/sup 2/. The resulting power gain density is 12 dB/mm/sup 2/ at 94 GHz.
Keywords :
HEMT integrated circuits; MMIC amplifiers; coplanar waveguides; field effect MIMIC; gain control; millimetre wave amplifiers; 0.15 micron; 37 dB; 94 GHz; AlGaAs-InGaAs-GaAs; CPW; EHF; MIMIC; PHEMT; PM-HEMT technology; W-band; compact design; coplanar technology; dual-gate HEMTs; variable gain amplifier MMIC; wide control range; Circuits; Fabrication; Gain control; Gallium arsenide; HEMTs; Indium gallium arsenide; MMICs; MODFETs; Millimeter wave radar; Phased arrays;
Conference_Titel :
Microwave Symposium Digest, 1998 IEEE MTT-S International
Conference_Location :
Baltimore, MD, USA
Print_ISBN :
0-7803-4471-5
DOI :
10.1109/MWSYM.1998.705084
