• DocumentCode
    1867470
  • Title

    Evaluation of copper nanoparticles for low temperature bonded interconnections

  • Author

    Byung Hoon Lee ; Mei Zhen Ng ; Zinn, Alfred A. ; Chee Lip Gan

  • Author_Institution
    NTU-Lockheed Martin Joint Lab., Nanyang Technol. Univ., Singapore, Singapore
  • fYear
    2015
  • fDate
    June 29 2015-July 2 2015
  • Firstpage
    102
  • Lastpage
    106
  • Abstract
    In this study, we evaluate the application of copper nanoparticles as a low temperature bonded interconnection. The copper nanoparticles have an organic passivation layer which stabilizes them, preventing spontaneous particle fusion and growth at ambient temperatures, as well as avoiding oxidation before its usage. Thermogravimetric analysis and differential scanning calorimetry show that the solvents and passivation layer can be removed completely from the copper nanoparticles paste by a sintering profile of up to 200°C. Cross sectional analysis show that the copper nanoparticles have fused to create a low porosity layer that gave good shear strength of the bonded joint. Moreover, Cu nanoparticles bonded samples demonstrate excellent thermal stability after 1000 h of aging at 150°C under normal ambient, as the shear strength of the joints increased instead without any observable oxidation of the Cu nanoparticles layer. Lastly, the addition of copper nanowires to the nanoparticles paste further improves the mechanical strength of the bonded interconnections due to the retardation of the crack propagation.
  • Keywords
    ageing; bonding processes; copper; cracks; differential scanning calorimetry; integrated circuit interconnections; nanoparticles; nanowires; oxidation; passivation; porosity; shear strength; sintering; thermal stability; Cu; copper nanoparticles; copper nanowires; crack propagation; cross sectional analysis; differential scanning calorimetry; low porosity layer; low temperature bonded interconnections; mechanical strength; nanoparticle paste; organic passivation layer; particle fusion; shear strength; sintering profile; temperature 150 degC; thermal stability; thermogravimetric analysis; time 1000 h; Bonding; Copper; Heating; Joints; Microstructure; Nanoparticles; Passivation;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Physical and Failure Analysis of Integrated Circuits (IPFA), 2015 IEEE 22nd International Symposium on the
  • Conference_Location
    Hsinchu
  • Type

    conf

  • DOI
    10.1109/IPFA.2015.7224343
  • Filename
    7224343