Very low defects and high performance Ge-on-insulator p-MOSFETs with Al/sub 2/O/sub 3/ gate dielectrics

Author

Huang, C.H. ; Yang, M.Y. ; Albert Chin ; Chen, W.J. ; Zhu, C.X. ; Cho, B.J. ; Li, M.-F. ; Kwong, D.L.

Author_Institution

Dept. of Electron. Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan

fYear

2003

fDate

10-12 June 2003

Firstpage

119

Lastpage

120

Abstract

We demonstrate for the first time high quality and dislocation free Ge-on-insulator (GOI) p-MOSFETs with Al/sub 2/O/sub 3/ gate dielectrics [EOT=1.7 nm]. Compared to control Al/sub 2/O/sub 3//Si p-MOSFETs, the Al/sub 2/O/sub 3//GOI devices show similar leakage current for the same EOT, 2X increase in drive current, and 2.5X increase in hole mobility. In addition, the Al/sub 2/O/sub 3//GOI devices exhibit 1.3X enhanced hole mobility over the SiO/sub 2//Si universal hole mobility at E/sub eff/ of 1 MV/cm.

Keywords

MOSFET; aluminium compounds; elemental semiconductors; germanium; hole mobility; leakage currents; Al/sub 2/O/sub 3/ gate dielectrics; Al/sub 2/O/sub 3/-Ge; Al/sub 2/O/sub 3//GOI devices; Ge-on-insulator; hole mobility; leakage current; p-MOSFETs; Capacitance-voltage characteristics; Capacitors; Dielectric devices; Dielectric substrates; Dispersion; Leakage current; MOSFET circuits; Plasma applications; Plasma temperature; Wafer bonding;

fLanguage

English

Publisher

ieee

Conference_Titel

VLSI Technology, 2003. Digest of Technical Papers. 2003 Symposium on

Conference_Location

Kyoto, Japan

Print_ISBN

4-89114-033-X

Type

conf

DOI

10.1109/VLSIT.2003.1221114

Filename

1221114