• DocumentCode
    1867561
  • Title

    Understanding NBTI-induced dynamic variability in the nano-reliability Era: From devices to circuits

  • Author

    Runsheng Wang ; Pengpeng Ren ; Changze Liu ; Shaofeng Guo ; Ru Huang

  • Author_Institution
    Inst. of Microelectron., Peking Univ., Beijing, China
  • fYear
    2015
  • fDate
    June 29 2015-July 2 2015
  • Firstpage
    119
  • Lastpage
    121
  • Abstract
    This paper gives a brief overview of our recent findings on the NBTI-induced dynamic variations during device/circuit aging.
  • Keywords
    integrated circuit reliability; negative bias temperature instability; semiconductor device reliability; NBTI induced dynamic variability; nanoreliability era; Aging; Charge carrier processes; Degradation; Frequency dependence; MOSFET circuits; Nanoscale devices; Reliability;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Physical and Failure Analysis of Integrated Circuits (IPFA), 2015 IEEE 22nd International Symposium on the
  • Conference_Location
    Hsinchu
  • Type

    conf

  • DOI
    10.1109/IPFA.2015.7224347
  • Filename
    7224347
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1867561