Title :
Understanding NBTI-induced dynamic variability in the nano-reliability Era: From devices to circuits
Author :
Runsheng Wang ; Pengpeng Ren ; Changze Liu ; Shaofeng Guo ; Ru Huang
Author_Institution :
Inst. of Microelectron., Peking Univ., Beijing, China
fDate :
June 29 2015-July 2 2015
Abstract :
This paper gives a brief overview of our recent findings on the NBTI-induced dynamic variations during device/circuit aging.
Keywords :
integrated circuit reliability; negative bias temperature instability; semiconductor device reliability; NBTI induced dynamic variability; nanoreliability era; Aging; Charge carrier processes; Degradation; Frequency dependence; MOSFET circuits; Nanoscale devices; Reliability;
Conference_Titel :
Physical and Failure Analysis of Integrated Circuits (IPFA), 2015 IEEE 22nd International Symposium on the
Conference_Location :
Hsinchu
DOI :
10.1109/IPFA.2015.7224347
