• DocumentCode
    186764
  • Title

    Analyzing correlation between multiple traps in RTN characteristics

  • Author

    Obara, T. ; Teramoto, A. ; Yonezawa, A. ; Kuroda, Rihito ; Sugawa, Shigetoshi ; Ohmi, Tadahiro

  • Author_Institution
    Tohoku Univ., Sendai, Japan
  • fYear
    2014
  • fDate
    1-5 June 2014
  • Abstract
    The correlation between multiple traps in Random Telegraph Noise (RTN) were evaluated by using Time-Lag-Plot (TLP). The correlations between multiple traps were evaluated by transition paths on the TLP and there are two types of RTN. In the 1st case, multiple traps are independent from each other and in the second case the multiple traps have the correlation. We proposed the models for three states RTN to understanding the mechanism of them. These methods help us to understand the RTN mechanism and the correlation between multiple traps.
  • Keywords
    MOSFET; random noise; semiconductor device noise; RTN characteristics; TLP; correlation analysis; multiple traps; random telegraph noise; time-lag-plot; transition paths; Correlation; Electron traps; Histograms; Logic gates; MOSFET; Noise; Time-Lag-Plot; multiple traps; random telegraph noise; transition path;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Reliability Physics Symposium, 2014 IEEE International
  • Conference_Location
    Waikoloa, HI
  • Type

    conf

  • DOI
    10.1109/IRPS.2014.6860644
  • Filename
    6860644
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=186764