High Resistance Open localization

Author

Chen, Yen-Hao Jack ; Po Chih Huang ; Talanov, Vladimir ; Orozco, Antonio ; Gaudestad, Jan

Author_Institution

Honyang, Zhubei, Taiwan

fYear

2015

fDate

June 29 2015-July 2 2015

Firstpage

144

Lastpage

148

Abstract

Magnetic Field Imaging (MFI) is a widely used technique in the Semiconductor industry for non-destructive Electrical Fault Isolation (EFI) for shorts, leakages and opens. When the devices shrink and the mobile electronics industry has a more strict criteria for speed with low power consumption, making High Resistance Opens (HRO) failures more important to detect. We show in this paper two cases in which magnetic field phase analysis using MFI helped localize HRO failures that were causing delays and slower speed in addition to higher power consumption.

Keywords

fault location; integrated circuit testing; low-power electronics; magnetic fields; nondestructive testing; optical images; power consumption; semiconductor industry; EFI; HRO failures; MFI; high resistance open localization; magnetic field imaging; magnetic field phase analysis; mobile electronics industry; nondestructive electrical fault isolation; power consumption; semiconductor industry; Imaging; Magnetic fields; RF signals; Radio frequency; Resistance; SQUIDs; Sensors;

fLanguage

English

Publisher

ieee

Conference_Titel

Physical and Failure Analysis of Integrated Circuits (IPFA), 2015 IEEE 22nd International Symposium on the

Conference_Location

Hsinchu

Type

conf

DOI

10.1109/IPFA.2015.7224353

Filename

7224353