Title :
Robust HfN metal gate electrode for advanced MOS devices application
Author :
Yu, H.Y. ; Lim, H.F. ; Chen, J.H. ; Li, M.F. ; Zhu, C.X. ; Kwong, D.-L. ; Tung, C.H. ; Bera, K.L. ; Leo, C.J.
Author_Institution :
Dept. of ECE, Nat. Univ. of Singapore, Singapore
Abstract :
A comprehensive study of HfN metal gate electrode for advanced MOS devices application is presented for the first time. It is found that HfN is an excellent barrier against oxygen diffusion, has a midgap work function (4.65 eV) on SiO/sub 2/, and exhibits superior thermal stability with underlying gate dielectric. Negligible degradation in EOT, work function, leakage current, and TDDB upon high-temperature treatments (up to 1000/spl deg/C) has been observed in HfN gated MOS devices. These results suggest that HfN metal electrode is an ideal candidate for ultra thin body fully depleted SOI (FD-SOI) and symmetric double gate (SDG) MOS applications.
Keywords :
MOSFET; annealing; hafnium compounds; leakage currents; silicon-on-insulator; thermal stability; work function; 1000 degC; HfN; HfN gated MOS devices; HfN metal electrode; HfN metal gate electrode; MOS devices application; equivalent oxide thickness; high-temperature treatments; leakage current; midgap work function; symmetric double gate MOS applications; thermal stability; ultra thin body fully depleted SOI; Atherosclerosis; Conductivity; Electrodes; MOS capacitors; MOS devices; Paper technology; Robustness; Semiconductor films; Surface morphology; Voltage;
Conference_Titel :
VLSI Technology, 2003. Digest of Technical Papers. 2003 Symposium on
Conference_Location :
Kyoto, Japan
Print_ISBN :
4-89114-033-X
DOI :
10.1109/VLSIT.2003.1221130
