Title :
Metal-semiconductor-metal travelling wave-photodetectors
Author :
Jin-Wei Shi ; Chi-Kuang Sun ; Ying-Jay Yang
Author_Institution :
Graduate Inst. of Electro-Opt., Nat. Taiwan Univ., Taipei, Taiwan
Abstract :
Summary form only given. The bandwidth/efficiency of traditional vertically-illuminated metal-semiconductor-metal (MSM) photodetectors are limited by the RC time constant, the carrier drift time, and the carrier recombination time. In order to shorten the carrier transit/recombination time, 25 nm finger spacing has been fabricated by using high resolution e-beam lithography on low-temperature (LT) GaAs.
Keywords :
III-V semiconductors; electron beam lithography; gallium arsenide; metal-semiconductor-metal structures; photodetectors; surface recombination; 25 nm; GaAs; MSM photodetectors; RC time constant; bandwidth; carrier drift time; carrier recombination time; carrier transit time; efficiency; fabrication; high resolution electron-beam lithography; low-temperature; metal-semiconductor-metal structures; metal-semiconductor-metal travelling wave-photodetectors; photodetectors; travelling wave-photodetectors; vertically-illuminated photodetectors; Bandwidth; Charge carrier lifetime; Coplanar waveguides; Gallium arsenide; Optical surface waves; PIN photodiodes; Photodetectors; Radiative recombination; Sun; Wet etching;
Conference_Titel :
Lasers and Electro-Optics, 1999. CLEO '99. Summaries of Papers Presented at the Conference on
Conference_Location :
Baltimore, MD, USA
Print_ISBN :
1-55752-595-1
DOI :
10.1109/CLEO.1999.834155
