DocumentCode :
1867985
Title :
An efficient method of exposing on-chip polyfuses using dry chemical Plasma etching technique
Author :
Mendaros, R.G. ; Marcelo, M.T.
Author_Institution :
Worldwide Product Anal., Analog Devices Gen. Trias, Cavite, Philippines
fYear :
2015
fDate :
June 29 2015-July 2 2015
Firstpage :
189
Lastpage :
192
Abstract :
An efficient, robust and straight forward approach in exposing on-chip polyfuses underneath oxide layers by using an Inductively Coupled Plasma (ICP) etching machine has been established.
Keywords :
semiconductor device metallisation; sputter etching; dry chemical plasma etching technique; inductively coupled plasma etching machine; on-chip polyfuses; oxide layers; Chemicals; Etching; Fuses; Passivation; Plasmas; Scanning electron microscopy;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Physical and Failure Analysis of Integrated Circuits (IPFA), 2015 IEEE 22nd International Symposium on the
Conference_Location :
Hsinchu
Type :
conf
DOI :
10.1109/IPFA.2015.7224364
Filename :
7224364
Link To Document :
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