Title :
Highly accurate TEM/EDS analysis to identify the stack oxide-nitride-oxide structure of advanced NAND flash products
Author :
Lin, C.C. ; Chen, S.Y. ; Wang, J. ; Hsieh, C.L.
Author_Institution :
Integrated Service Technol., Hsinchu, Taiwan
fDate :
June 29 2015-July 2 2015
Abstract :
In this work, the electron dispersive spectroscopy (EDS) methodology was used to identify the thin stack oxide-nitride-oxide (ONO) structure of advanced NAND flash products. By the specific dual silicon drift detectors (SDDs) hardware design and the optimized parameters for data acquisition, the accurate results from a damage-free specimen can be obtained.
Keywords :
dielectric thin films; electron energy loss spectra; flash memories; transmission electron microscopy; EDS analysis; ONO structure; TEM analysis; advanced NAND flash products; dual silicon drift detector; electron dispersive spectroscopy; stack oxide-nitride-oxide structure; Chemicals; Detectors; Electron beams; Flash memories; Nitrogen; Silicon; Spectroscopy;
Conference_Titel :
Physical and Failure Analysis of Integrated Circuits (IPFA), 2015 IEEE 22nd International Symposium on the
Conference_Location :
Hsinchu
DOI :
10.1109/IPFA.2015.7224365
