DocumentCode :
1868020
Title :
Quantitative analysis of the accuracy and sensitivity of strain measurements from nanobeam electron diffraction
Author :
Williamson, M.J. ; van Dooren, P. ; Flanagan, J.
Author_Institution :
FEI Co., Eindhoven, Netherlands
fYear :
2015
fDate :
June 29 2015-July 2 2015
Firstpage :
197
Lastpage :
200
Abstract :
It is difficult to determine the accuracy of NBD measurements for several reasons including, the uncertainty in the actual value of the strain in the reference patterns, uncertainty in the strain of known reference samples due to sample preparation, and uncertainty in the algorithms used measure the reflection positions. In order to quantify the accuracy and sensitivity of NBD analysis several reflection fitting algorithms have been tested using simulated diffraction patterns and experimental data from structures of known composition.
Keywords :
carrier mobility; electron diffraction; nondestructive testing; semiconductor device measurement; NBD analysis; NBD measurements; nanobeam electron diffraction; reference patterns; reflection fitting algorithms; simulated diffraction patterns; Correlation; Diffraction; Fitting; Reflection; Sensitivity; Strain; Strain measurement;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Physical and Failure Analysis of Integrated Circuits (IPFA), 2015 IEEE 22nd International Symposium on the
Conference_Location :
Hsinchu
Type :
conf
DOI :
10.1109/IPFA.2015.7224366
Filename :
7224366
Link To Document :
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