Title :
Direct measurement of the inversion charge in MOSFETs: application to mobility extraction in alternative gate dielectrics
Author :
Kerber, A. ; Cartier, E. ; Ragnarsson, L.A. ; Rosmeulen, M. ; Pantisano, L. ; Degraeve, R. ; Kim, Y. ; Groeseneken, G.
Author_Institution :
Infineon Technol. AG, Leuven, Belgium
Abstract :
It is shown that the inversion charge in MOSFETs can be directly measured by a variant of the charge pumping (C-P) technique in long channel devices (inversion-charge pumping (ICP)). This new technique is used to demonstrate that charge trapping and net-fixed charge in n-channel MOSFETs with SiO/sub 2//HfO/sub 2/ dual layer gate dielectrics are not the primary cause for the strong mobility degradation.
Keywords :
MOSFET; carrier mobility; charge measurement; dielectric materials; hafnium compounds; inversion layers; semiconductor device measurement; silicon compounds; SiO/sub 2/-HfO/sub 2/; SiO/sub 2//HfO/sub 2/ dual layer; charge trapping; gate dielectrics; inversion charge pumping; metal oxide semiconductor field effect transistor; mobility degradation; mobility extraction; n-channel MOSFET; Annealing; Capacitance-voltage characteristics; Charge measurement; Charge pumps; Current measurement; Dielectric measurements; FETs; Frequency; MOSFET circuits; Pulse measurements;
Conference_Titel :
VLSI Technology, 2003. Digest of Technical Papers. 2003 Symposium on
Conference_Location :
Kyoto, Japan
Print_ISBN :
4-89114-033-X
DOI :
10.1109/VLSIT.2003.1221134
