DocumentCode
1868029
Title
Improved compact channel current model of power radio frequency SOI LDMOS for CAD tools
Author
Cao, Quan-Jun ; Zeng Jie ; Jia Li-Xin ; He Xiongxiong
Author_Institution
College of Information Engineering, Zhejiang University of Technology, Hangzhou, 310023, China
fYear
2012
fDate
3-5 March 2012
Firstpage
1193
Lastpage
1195
Abstract
Based on a drift current model, along the channel current of MM20 model, an approved SOI LDMOS compact model is presented in this paper. A continued and concise expression of the presented model for easily analysis of harmonic balance, which considers the quasi-saturation effect of SOI LDMOS and short channel effect, are observed. Comparison of simulated results of DC I–V and transform characteristic for the presented model with measured data are made, which shows they are well agreed, and this model is verified.
Keywords
Frequency; Power; Radio; SOI LDMOS Compact model;
fLanguage
English
Publisher
iet
Conference_Titel
Automatic Control and Artificial Intelligence (ACAI 2012), International Conference on
Conference_Location
Xiamen
Electronic_ISBN
978-1-84919-537-9
Type
conf
DOI
10.1049/cp.2012.1192
Filename
6492799
Link To Document