Improved compact channel current model of power radio frequency SOI LDMOS for CAD tools

Based on a drift current model, along the channel current of MM20 model, an approved SOI LDMOS compact model is presented in this paper. A continued and concise expression of the presented model for easily analysis of harmonic balance, which considers the quasi-saturation effect of SOI LDMOS and short channel effect, are observed. Comparison of simulated results of DC I–V and transform characteristic for the presented model with measured data are made, which shows they are well agreed, and this model is verified.