DocumentCode
1868037
Title
Junction/well stain (delineation) technique to unveil different types of implantation defects
Author
Tze Ping Chua ; Chee Hong Chong ; Chen Tung Hung
Author_Institution
United Microelectron. Corp. (Singapore Branch), Ltd., Singapore, Singapore
fYear
2015
fDate
June 29 2015-July 2 2015
Firstpage
201
Lastpage
204
Abstract
Implantation is a key process in semiconductor manufacturing. However, the implantation related defects are not easily inspected by Scanning Electron Microscope, Transmission Electron Microscopy and Focused Ion Beam without chemical treatment. In this paper, implantation related defects were isolated by FA techniques and wet chemical stain technique was employed to unveil the different types of implant defects.
Keywords
failure analysis; focused ion beam technology; ion implantation; scanning electron microscopy; transmission electron microscopy; delineation technique; failure analysis; focused ion beam; implantation defects; junction-well stain technique; scanning electron microscope; transmission electron microscopy; wet chemical stain technique; Chemicals; Failure analysis; Implants; Inspection; Random access memory; Scanning electron microscopy;
fLanguage
English
Publisher
ieee
Conference_Titel
Physical and Failure Analysis of Integrated Circuits (IPFA), 2015 IEEE 22nd International Symposium on the
Conference_Location
Hsinchu
Type
conf
DOI
10.1109/IPFA.2015.7224367
Filename
7224367
Link To Document