Title :
Energy distribution of interface traps in high-k gated MOSFETs
Author :
Han, J.-P. ; Vogel, E.M. ; Gusev, E.P. ; D´Emic, C. ; Richter, C.A. ; Heh, D.W. ; Suehle, J.S.
Author_Institution :
Div. of Semicond. Electron., Nat. Inst. of Stand. & Technol., Gaithersburg, MD, USA
Abstract :
We use variable rise/fall-time charge pumping (CP) to determine the energy distribution of interface trap density (Dit) and capture cross-section of electrons/holes in high-k HfO/sub 2/ gated nMOSFETs. Our results have revealed that the Dit is much higher in the upper half of the bandgap than that in the lower half of the bandgap. These results are consistent with the observation that n-channel mobilities are more severely degraded than p-channel mobilities when compared to conventional MOSFET´s with SiO/sub 2/ as the gate dielectric. The results were verified by capacitance-voltage (C-V) and ac conductance techniques.
Keywords :
MOSFET; carrier mobility; dielectric materials; energy gap; hafnium compounds; interface states; semiconductor device measurement; HfO/sub 2/; ac conductance measurement; bandgap; capacitance-voltage measurement; charge pumping; electrons capture; gate dielectrics; high-k gate MOSFET; holes capture cross section; interface trap density; n-channel mobilities; p-channel mobilities; Capacitance-voltage characteristics; Charge carrier processes; Charge pumps; Electron traps; Energy capture; Hafnium oxide; High K dielectric materials; High-K gate dielectrics; MOSFETs; Photonic band gap;
Conference_Titel :
VLSI Technology, 2003. Digest of Technical Papers. 2003 Symposium on
Conference_Location :
Kyoto, Japan
Print_ISBN :
4-89114-033-X
DOI :
10.1109/VLSIT.2003.1221135
