Title :
High mobility MISFET with low trapped charge in HfSiO films
Author :
Morioka, Ayuka ; Watanabe, Hiromi ; Miyamura, Makoto ; Tatsumi, Taizo ; Saitoh, Masatoshi ; Ogura, Tsuneo ; Iwamoto, Takuya ; Ikarashi, T. ; Saito, Yuya ; Okada, Yoshitaka ; Watanabe, Hiromi ; Mochiduki, Y. ; Mogami, Tohru
Author_Institution :
Silicon Syst. Res. Lab., NEC Corp., Sagamihara, Japan
Abstract :
MISFETs with HfSiO (EOT:1.8 nm) gate insulator have been reached high Ion (95%) and low gate leakage current (1/100) against SiO/sub 2/ gate film. This was achieved by the suppression of the remote Coulomb scattering, caused by the electron traps in the HfSiO gate stack. It was experimentally confirmed that less than 3/spl times/10/sup 12/ C/cm/sup 2/ electron trap level is required to get high mobility.
Keywords :
MISFET; electron mobility; electron traps; hafnium compounds; leakage currents; thin films; Coulomb scattering; HfSiO; HfSiO films; HfSiO gate stack; SiO/sub 2/ gate film; electron mobility; electron trap level; electron traps; gate insulator; gate leakage current; mobility MISFET; trapped charge; Capacitance-voltage characteristics; Electrodes; Electron traps; High-K gate dielectrics; Insulation; Leakage current; MISFETs; Semiconductor films; Silicon; Voltage;
Conference_Titel :
VLSI Technology, 2003. Digest of Technical Papers. 2003 Symposium on
Conference_Location :
Kyoto, Japan
Print_ISBN :
4-89114-033-X
DOI :
10.1109/VLSIT.2003.1221137
