Modeling of metal-oxide-semiconductor capacitor on Indium Gallium Nitride 1- channel model

Author

Menkad, Tarik ; Alexandrov, D. ; Butcher, K.S.A.

Author_Institution

Dept. of Electr. Eng., Lakehead Univ., Thunder Bay, ON, Canada

fYear

2012

fDate

April 29 2012-May 2 2012

Firstpage

1

Lastpage

7

Abstract

A new analytical model for a two terminal metal-oxide-Gallium Nitride/Indium Gallium Nitride heterojunction structure is presented. This model characterizes the space charge layer created by electron tunneling in the structure´s channel which is made of intrinsic Gallium Nitride. A one dimensional (1-D) analysis is adopted, and a set of hypotheses is stated to frame the present work.

Keywords

MOS capacitors; gallium compounds; indium compounds; semiconductor device models; space charge; tunnelling; 1D analysis; In_0.5Ga_0.5N; analytical model; electron tunneling; indium gallium nitride 1-channel model; indium gallium nitride heterojunction structure; intrinsic gallium nitride; metal-oxide-semiconductor capacitor modeling; space charge layer; structure channel; two terminal metal-oxide-gallium nitride; Electric fields; Electric potential; Equations; Gallium nitride; Heterojunctions; Logic gates; Mathematical model; Gallium Nitride GaN; Indium Gallium Nitride In0.5Ga0.5N; excitons;

fLanguage

English

Publisher

ieee

Conference_Titel

Electrical & Computer Engineering (CCECE), 2012 25th IEEE Canadian Conference on

Conference_Location

Montreal, QC

ISSN

0840-7789

Print_ISBN

978-1-4673-1431-2

Electronic_ISBN

0840-7789

Type

conf

DOI

10.1109/CCECE.2012.6334924

Filename

6334924