0.18 /spl mu/m SBT-based embedded FeRAM operating at a low voltage of 1.1 V

Author

Nagano, Y. ; Mikawa, T. ; Kutsunai, T. ; Hayashi, S. ; Nasu, T. ; Natsume, S. ; Tatsunari, T. ; Ito, T. ; Goto, S. ; Yano, H. ; Noma, A. ; Nagahashi, K. ; Miki, T. ; Sakagami, M. ; Izutsu, Y. ; Nakakuma, T. ; Hirano, H. ; Iwanari, S. ; Murakuki, Y. ; Yama

Author_Institution

ULSI Process Technol. Centre, Matsushita Electr. Ind. Co. Ltd., Kyoto, Japan

fYear

2003

fDate

10-12 June 2003

Firstpage

171

Lastpage

172

Abstract

We have successfully developed a 0.18 /spl mu/m SBT-based 1 Mbit embedded FeRAM, which operates at a very low voltage of 1.1 V and ensures the data retention time up to 1000 hours at 125/spl deg/C. The low voltage operation and high reliability characteristics of 0.18 /spl mu/m embedded FeRAM are the first demonstration to our knowledge. These excellent characteristics have been attained by newly developed FeRAM completely encapsulated by hydrogen barriers.

Keywords

bismuth compounds; random-access storage; semiconductor device reliability; strontium compounds; 0.18 micron; 1.1 V; 1000 h; 125 degC; FeRAM; SrBi/sub 2/Ta/sub 2/O/sub 9/Nb/sub 2/O/sub 9/; data retention time; hydrogen barriers; reliability; Capacitors; Degradation; Electrodes; Ferroelectric films; Hydrogen; Low voltage; Nonvolatile memory; Passivation; Plugs; Random access memory;

fLanguage

English

Publisher

ieee

Conference_Titel

VLSI Technology, 2003. Digest of Technical Papers. 2003 Symposium on

Conference_Location

Kyoto, Japan

Print_ISBN

4-89114-033-X

Type

conf

DOI

10.1109/VLSIT.2003.1221140

Filename

1221140