• DocumentCode
    186816
  • Title

    An LDMOS hot carrier model for circuit reliability simulation

  • Author

    Sasse, Guido T. ; Claes, Jan A. M. ; de Vries, Bert

  • Author_Institution
    Integrated Technol. Platform, NXP Semicond., Nijmegen, Netherlands
  • fYear
    2014
  • fDate
    1-5 June 2014
  • Abstract
    In this paper we present a model that can be used to calculate hot carrier degradation in LDMOS devices within a circuit reliability simulation environment. The model is suitable for both nLDMOS and pLDMOS devices. We show experimental evidence on the applicability of this model over a broad range of VGS and VDS biases as well as temperature.
  • Keywords
    MOSFET; hot carriers; semiconductor device models; semiconductor device reliability; LDMOS hot carrier; circuit reliability simulation; hot carrier degradation; nLDMOS devices; pLDMOS devices; Degradation; Electric fields; Hot carriers; Integrated circuit modeling; Integrated circuit reliability; Stress; LDMOS; Reliability simulation; hot carrier degradation;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Reliability Physics Symposium, 2014 IEEE International
  • Conference_Location
    Waikoloa, HI
  • Type

    conf

  • DOI
    10.1109/IRPS.2014.6860674
  • Filename
    6860674
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=186816