DocumentCode
1868261
Title
Effect of nanowire length to silicon nanowire/PEDOT:PSS solar cells
Author
Syu, Hong-Jhang ; Shiu, Shu-Chia ; Lin, Ching-Fuh
Author_Institution
Grad. Inst. of Photonics & Optoelectron., Nat. Taiwan Univ., Taipei, Taiwan
fYear
2011
fDate
19-24 June 2011
Abstract
Silicon nanowire (SiNW)/Poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS) solar cells were fabricated by solution process. The effect of nanowire length to cell performance was investigated for the nanowire length varying from 0.73 μm to 5.59 μm. The nanowire length was found to have negative effect on the power conversion efficiency (PCE), in the condition of the fixed thickness of PEDOTPSS. The highest PCE of 7.02% was obtained for the wire length of 0.73 μm.
Keywords
elemental semiconductors; nanowires; organic semiconductors; semiconductor quantum wires; silicon; solar cells; PEDOT:PSS solar cells; Si; poly(3,4-ethylenedioxythiophene); poly(styrenesulfonate); power conversion efficiency; silicon nanowire; Arrays; Etching; Indium tin oxide; Nanoscale devices; Photovoltaic cells; Reflectivity; Silicon;
fLanguage
English
Publisher
ieee
Conference_Titel
Photovoltaic Specialists Conference (PVSC), 2011 37th IEEE
Conference_Location
Seattle, WA
ISSN
0160-8371
Print_ISBN
978-1-4244-9966-3
Type
conf
DOI
10.1109/PVSC.2011.6186451
Filename
6186451
Link To Document