Title :
Current imaging technique with nanometer resolution for failure analysis of metal layers
Author :
Biring, Sajal ; Chih-Feng Chiang ; Chia-Hsiang Yen ; Chih-Hsun Chu
Author_Institution :
Mater. Anal. Technol. Inc., Hsinchu, Taiwan
fDate :
June 29 2015-July 2 2015
Abstract :
Failure analysis of metal layers (open or short) in semiconductor industry is performed primarily by OBIRCH, thermal imaging, and SQUID technology which show resolution of few microns, only. Here, we present a current imaging technique to isolate the fault by biasing part of the metal lines with AFM tips and scanning another conductive AFM tip in the interested area. The collected current image is capable of isolating failure location in the nanometer regime.
Keywords :
atomic force microscopy; failure analysis; fault location; nondestructive testing; semiconductor device metallisation; AFM; OBIRCH; SQUID technology; atomic force microscopy imaging; failure analysis; failure location; imaging technique; metal layers; nanometer resolution; semiconductor industry; thermal imaging; Failure analysis; Imaging; Metals; Probes; Resistance; Spatial resolution;
Conference_Titel :
Physical and Failure Analysis of Integrated Circuits (IPFA), 2015 IEEE 22nd International Symposium on the
Conference_Location :
Hsinchu
DOI :
10.1109/IPFA.2015.7224379
