Title :
Very wide tuning range micro-electromechanical capacitors in the MUMPs process for RF applications
Author :
Tsang, T.K.K. ; El-Gamal, M.N.
Author_Institution :
Microelectron. & Comput. Syst. Lab., McGill Univ., Montreal, Que., Canada
Abstract :
A structure that extends the tuning range of MEMS capacitors by at least a factor of eight, compared to recently reported devices fabricated in the same polysilicon surface micromachining MUMPs process, is proposed. A 0.2 pF capacitor has a 325% tuning range, and a Q-factor of 90 at 2.4 GHz. A variation of the same structure has a 0.6 pF capacitance and a 433% tuning range, compared to 238% and 253% for state-of-the-art MEMS and CMOS devices, respectively. The self-resonance frequencies of both devices are beyond 4 GHz.
Keywords :
CMOS integrated circuits; Q-factor; UHF devices; capacitors; elemental semiconductors; micromachining; micromechanical devices; semiconductor devices; semiconductor technology; silicon; 0.2 pF; 0.6 pF; 2.4 GHz; CMOS devices; MEMS capacitors; MUMPs process; Q-factor; Si; microelectromechanical capacitors; polysilicon surface micromachining; Application software; Capacitors; Circuit optimization; Costs; Isolation technology; Micromachining; Micromechanical devices; Q factor; Radio frequency; Tuning;
Conference_Titel :
VLSI Circuits, 2003. Digest of Technical Papers. 2003 Symposium on
Conference_Location :
Kyoto, Japan
Print_ISBN :
4-89114-034-8
DOI :
10.1109/VLSIC.2003.1221154
