Title :
Title: In-depth analysis to identify process related defects causing Electrical Overstress on Clip bonded Schottky power rectifiers: A case study
Author :
de La Cruz, Em Julius ; Yusof, Yusnani Mohamad ; Bruno, Micaella
Author_Institution :
ON Semicond. Malaysia Sdn. Bhd., Seremban, Malaysia
fDate :
June 29 2015-July 2 2015
Abstract :
Identifying process related defects that can trigger Electrical Overstress (EOS) is very important in order to address the real root cause of failure. This paper presents case study where in-depth analysis performed on Clip-bonded Schottky rectifiers found with EOS damage identified potential assembly and wafer fabrication defects, leading to effective corrective actions.
Keywords :
Schottky barriers; Schottky diodes; crack detection; solid-state rectifiers; stress effects; EOS damage; assembly defects; clip bonded Schottky power rectifiers; electrical overstress; process related defects; wafer fabrication defects; Assembly; Earth Observing System; Metals; Rectifiers; Schottky diodes; Silicides; Stress;
Conference_Titel :
Physical and Failure Analysis of Integrated Circuits (IPFA), 2015 IEEE 22nd International Symposium on the
Conference_Location :
Hsinchu
DOI :
10.1109/IPFA.2015.7224385
