DocumentCode
1868518
Title
Title: In-depth analysis to identify process related defects causing Electrical Overstress on Clip bonded Schottky power rectifiers: A case study
Author
de La Cruz, Em Julius ; Yusof, Yusnani Mohamad ; Bruno, Micaella
Author_Institution
ON Semicond. Malaysia Sdn. Bhd., Seremban, Malaysia
fYear
2015
fDate
June 29 2015-July 2 2015
Firstpage
305
Lastpage
309
Abstract
Identifying process related defects that can trigger Electrical Overstress (EOS) is very important in order to address the real root cause of failure. This paper presents case study where in-depth analysis performed on Clip-bonded Schottky rectifiers found with EOS damage identified potential assembly and wafer fabrication defects, leading to effective corrective actions.
Keywords
Schottky barriers; Schottky diodes; crack detection; solid-state rectifiers; stress effects; EOS damage; assembly defects; clip bonded Schottky power rectifiers; electrical overstress; process related defects; wafer fabrication defects; Assembly; Earth Observing System; Metals; Rectifiers; Schottky diodes; Silicides; Stress;
fLanguage
English
Publisher
ieee
Conference_Titel
Physical and Failure Analysis of Integrated Circuits (IPFA), 2015 IEEE 22nd International Symposium on the
Conference_Location
Hsinchu
Type
conf
DOI
10.1109/IPFA.2015.7224385
Filename
7224385
Link To Document