Title :
Photorefraction in CdTe:Ge enhanced by auxiliary illumination
Author :
Odoulov, S. ; Shcherbin, K. ; Briat, B. ; Ramaz, F.
Author_Institution :
Inst. of Phys., Acad. of Sci., Kiev, Ukraine
Abstract :
Summary form only given. CdTe:Ge ensures the largest two-beam coupling gain factor among all photorefractive semiconductors with no electric field. At the same time a large scatter of data is observed even for the samples cut from the same ingot and the ultimate values of the diffraction efficiency and gain factor are still smaller than the predicted by the theory.
Keywords :
II-VI semiconductors; cadmium compounds; germanium; infrared spectra; multiwave mixing; photorefractive materials; CdTe:Ge; CdTe:Ge photorefractive materials; auxiliary illumination; diffraction efficiency; electric field; gain factor; photorefractive semiconductors; two-beam coupling gain factor; CD recording; Charge carrier processes; Electron traps; Electronic mail; Frequency modulation; Gratings; Intensity modulation; Lighting; Photorefractive effect; Physics;
Conference_Titel :
Lasers and Electro-Optics, 1999. CLEO '99. Summaries of Papers Presented at the Conference on
Conference_Location :
Baltimore, MD, USA
Print_ISBN :
1-55752-595-1
DOI :
10.1109/CLEO.1999.834186
