Photorefractive wave mixing in semi-insulating InGaAs/GaAs multiple quantum wells

Author

Iwamoto, Satoshi ; Kageshima, H. ; Yuasa, Takeshi ; Nishioka, Michi ; Someya, Takao ; Arakawa, Yasuhiko ; Shimura, Toshihiro ; Kuroda, K.

Author_Institution

Inst. of Ind. Sci., Tokyo Univ., Japan

fYear

1999

fDate

28-28 May 1999

Firstpage

278

Lastpage

279

Abstract

Summary form only given. Photorefractive multiple quantum wells (MQWs) have become important for the realization of fast and two-dimensional optical image processing devices. Wang et al. have reported the photorefractive effect in InGaAs-GaAs MQWs around 0.9 /spl mu/m. But the details of two-wave mixing (TWM) have not been mentioned. Here we report the photorefractive effect including the TWM properties in InGaAs-GaAs MQWs around a wavelength of 0.93 /spl mu/m.

Keywords

III-V semiconductors; gallium arsenide; image processing; indium compounds; multiwave mixing; photorefractive materials; semiconductor quantum wells; 0.9 mum; 0.93 mum; InGaAs-GaAs; InGaAs-GaAs MQWs; InGaAs-GaAs multiple quantum wells; photorefractive effect; photorefractive wave mixing; semi-insulating InGaAs/GaAs; two-dimensional optical image processing devices; two-wave mixing; Birefringence; Gallium arsenide; Indium gallium arsenide; Insulation; Photorefractive effect; Photorefractive materials; Polarization; Polymers; Quantum well devices; Resonance;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics, 1999. CLEO '99. Summaries of Papers Presented at the Conference on

Conference_Location

Baltimore, MD, USA

Print_ISBN

1-55752-595-1

Type

conf

DOI

10.1109/CLEO.1999.834188

Filename

834188