Fully-integrated PMOS-based charge pumps in standard CMOS process without high-voltage switches

Author

Jingqi Liu ; Bazzini, A. ; Gregori, Stefano

Author_Institution

Sch. of Eng., Univ. of Guelph, Guelph, ON, Canada

fYear

2012

fDate

April 29 2012-May 2 2012

Firstpage

1

Lastpage

4

Abstract

In this paper, we present two new PMOS-based charge pumps which can be implemented in a standard 0.18-μm CMOS technology. In the proposed charge pumps, only low voltage transistors are needed as they always experience voltages no higher than VDD. The maximum output voltage is substantially increased and not limited by transistor gate-oxide and diffusion-to-substrate junction breakdown, without using a triple-well process. The proposed 2-stage charge pumps can reach a power conversion efficiency of 80% and a voltage conversion ratio of 98% in simulation.

Keywords

CMOS integrated circuits; MOSFET; low-power electronics; PMOS-based charge pump; diffusion-to-substrate junction breakdown; fully-integrated PMOS; high-voltage switch; low voltage transistor; maximum output voltage; power conversion efficiency; size 0.18 micron; standard CMOS process; transistor gate-oxide; voltage conversion ratio; Boosting; Capacitors; Charge pumps; Clocks; Power conversion; Standards; Transistors;

fLanguage

English

Publisher

ieee

Conference_Titel

Electrical & Computer Engineering (CCECE), 2012 25th IEEE Canadian Conference on

Conference_Location

Montreal, QC

ISSN

0840-7789

Print_ISBN

978-1-4673-1431-2

Electronic_ISBN

0840-7789

Type

conf

DOI

10.1109/CCECE.2012.6334949

Filename

6334949