120 Watt, 2 GHz, Si LDMOS RF power transistor for PCS base station applications

Author

Wood, A. ; Brakensick, W. ; Dragon, C. ; Burger, W.

Author_Institution

Wireless Infrastructure Syst. Div., Motorola Inc., Phoenix, AZ, USA

Volume

2

fYear

1998

fDate

7-12 June 1998

Firstpage

707

Abstract

The structure and performance of a 120 W, 2 GHz, Si RF LDMOS power transistor are described suitable for personal communication systems base station power amplifiers operating in the 1.8-2.2 GHz frequency band. The high gain (10.6 dB at 120 W CW, 2 GHz), and excellent linearity of this transistor, when operated in class-AB, (typically -30 dBc two-tone intermodulation distortion at 120 W PEP) makes it eminently suitable for amplification of digitally modulated signals.

Keywords

UHF field effect transistors; UHF power amplifiers; elemental semiconductors; land mobile radio; personal communication networks; power MOSFET; silicon; 1.8 to 2.2 GHz; 120 W; 2 GHz; PCS base station applications; Si; Si LDMOS RF power transistor; base station power amplifiers; class-AB operation; digitally modulated signals; linearity; Base stations; Digital modulation; Gain; Intermodulation distortion; Linearity; Personal communication networks; Power amplifiers; Power transistors; Radio frequency; Radiofrequency amplifiers;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 1998 IEEE MTT-S International

Conference_Location

Baltimore, MD, USA

ISSN

0149-645X

Print_ISBN

0-7803-4471-5

Type

conf

DOI

10.1109/MWSYM.1998.705089

Filename

705089