Hard mask free DRIE of crystalline Si nanobarrel with 6.7nm wall thickness and 50∶1 aspect ratio

Author

Peng Liu ; Fang Yang ; Wei Wang ; Wei Wang ; Kui Luo ; Ying Wang ; Dacheng Zhang

Author_Institution

Inst. of Microelectron., Peking Univ., Beijing, China

fYear

2015

fDate

18-22 Jan. 2015

Firstpage

77

Lastpage

80

Abstract

Because of the unique mechanical and electrical properties, silicon was widely used in IC/MEMS devices for decades. However, it is difficult to fabricate high aspect ratio structures when the feature size scaling down to 7nm. In this paper, single crystal Si nano barrel with wall thickness 6.7nm and aspect ratio 50:1 was achieved by top-down process. The fabrication was carried out by Electron Beam Lithography (EBL) for patterning and DRIE for pattern transfer, utilizing photoresist as etching mask directly. To predict the barrel profile, a model of ion transportation was established. This tactic provides a potential arsenal for the next generation of 3D-IC and NEMS devices.

Keywords

electron beam lithography; masks; nanoelectromechanical devices; nanolithography; nanopatterning; photoresists; silicon; sputter etching; three-dimensional integrated circuits; 3D integrated circuit; NEMS device; Si; crystalline nanobarrel; deep reactive ion etching; electron beam lithography; etching mask; hard mask free DRIE; pattern transfer; photoresist; size 6.7 nm; top down process; Etching; Fabrication; Ions; Passivation; Resists; Silicon; Substrates;

fLanguage

English

Publisher

ieee

Conference_Titel

Micro Electro Mechanical Systems (MEMS), 2015 28th IEEE International Conference on

Conference_Location

Estoril

Type

conf

DOI

10.1109/MEMSYS.2015.7050890

Filename

7050890