Thermal memory effect modeling and compensation for GaN Doherty amplifier

Author

Suk-hui Lee ; Ki-Jin Kim ; Sanghoon Park ; Ahn, K.H. ; Sung-il Bang

Author_Institution

Convergence Commun. Components Res. Center, Korea Electron. Technol. Inst., Seongnam, South Korea

fYear

2014

fDate

22-24 Oct. 2014

Firstpage

878

Lastpage

879

Abstract

This paper reports on an attempt to investigate, model and quantity the contribution of the electrical nonlinearity effects and the thermal memory effects to a Doherty amplifier´s distortion generation and suggests thermal memory effect compensator for pre-distorter. Also this paper reports on the development of advanced Doherty amplifier structure with limiter and linear amplifier. A compensated LLHD amplifier enhances ACLR performance about 22 dB.

Keywords

III-V semiconductors; amplifiers; compensation; gallium compounds; limiters; thermal engineering; wide band gap semiconductors; ACLR performance; Doherty amplifier distortion generation; GaN; compensated LLHD amplifier; electrical nonlinearity effect; limiter amplifier; linear amplifier; pre-distortion; thermal memory effect modeling; Linearity; Mathematical model; Phase modulation; Radio frequency; Temperature; Temperature measurement; Transistors; Distortion compensation; Doherty Amplifiers; Electrothermal effects; predistortion;

fLanguage

English

Publisher

ieee

Conference_Titel

Information and Communication Technology Convergence (ICTC), 2014 International Conference on

Conference_Location

Busan

Type

conf

DOI

10.1109/ICTC.2014.6983320

Filename

6983320