DocumentCode :
1869052
Title :
A 1-V CMOS/SOI bluetooth RF transceiver for compact mobile applications
Author :
Ugajin, M. ; Yamagishi, A. ; Kodate, J. ; Harada, M. ; Tsukahara, T.
Author_Institution :
NTT Microsyst. Integration Lab., Kanagawa, Japan
fYear :
2003
fDate :
12-14 June 2003
Firstpage :
123
Lastpage :
126
Abstract :
A Bluetooth RF transceiver in 0.2-/spl mu/m CMOS/SOI achieves 1-V operation and paves the way for further system-size reduction by using a small NiH battery. The transceiver integrates a T/R switch, an image-reject mixer, a quadrature demodulator, gm-C filters, an LC-tank voltage-controlled oscillator, a PLL, and a power amplifier. The phase shifter in the quadrature demodulator is tuned dynamically to deal with carrier-frequency drift. A gm cell in the filters uses depletion-mode PMOS transistors and has a folded structure. The transceiver shows -77-dBm sensitivity at 0.1% BER.
Keywords :
Bluetooth; CMOS integrated circuits; MOSFET; demodulators; mixers (circuits); mobile communication; phase locked loops; phase shifters; radiofrequency filters; silicon-on-insulator; transceivers; voltage-controlled oscillators; 0.2 micron; 1 V; CMOS/SOI bluetooth RF transceiver; LC-tank voltage-controlled oscillator; NiH battery; PLL; Si-SiO/sub 2/; T/R switch; carrier-frequency drift; compact mobile applications; depletion-mode PMOS transistors; dynamic tuning; folded structure; gm-C filters; image-reject mixer; phase shifter; power amplifier; quadrature demodulator; system-size reduction; Batteries; Bluetooth; Demodulation; Filters; Phase locked loops; Power amplifiers; Radio frequency; Switches; Transceivers; Voltage-controlled oscillators;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
VLSI Circuits, 2003. Digest of Technical Papers. 2003 Symposium on
Conference_Location :
Kyoto, Japan
Print_ISBN :
4-89114-034-8
Type :
conf
DOI :
10.1109/VLSIC.2003.1221179
Filename :
1221179
Link To Document :
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