Oxygen pressure induced the electrical properties of amorphous LaAlO3 dielectric deposited by pulsed laser deposition at room temperature

Author

Prakoso, Suhendro Purbo ; Wen-Sheng Feng ; Kou-Chen Liu

Author_Institution

Dept. of Electron. Eng., Chang Gung Univ., Taoyuan, Taiwan

fYear

2015

fDate

June 29 2015-July 2 2015

Firstpage

350

Lastpage

353

Abstract

The amorphous LaAlO₃ (LAO) thin films were prepared with different oxygen flow rate using pulsed laser deposition (PLD) at room temperature and without additional thermal treatment. The Al/LAO/ITO MIM capacitor stacks were deployed to test the variation of its electrical characteristics in conjunction with atomic force microscopy (AFM), Alpha-step profiler, x-ray photoelectron spectroscopy (XPS), x-ray diffraction (XRD), and tunneling electron microscopy (TEM) measurements. In this study, the leakage current and capacitance density of up to 10^-9 A/cm² and 71.5 nF/cm², respectively, were achieved with optimum oxygen pressures.

Keywords

MIM devices; X-ray diffraction; X-ray photoelectron spectra; aluminium compounds; amorphous semiconductors; atomic force microscopy; high-k dielectric thin films; indium compounds; lanthanum compounds; leakage currents; pulsed laser deposition; thin film capacitors; titanium compounds; transmission electron microscopy; AFM; Al-LAO-ITO MIM capacitor stacks; Alpha-step profiler; ITO; LaAlO₃; PLD; TEM measurements; XPS; XRD; amorphous LAO thin films; amorphous LaAlO3 thin films; atomic force microscopy; capacitance density; electrical characteristics; leakage current; optimum oxygen pressures; oxygen flow rate; pulsed laser deposition; tunneling electron microscopy measurements; x-ray diffraction; x-ray photoelectron spectroscopy; Capacitance; Dielectrics; Films; Glass; Indium tin oxide; Leakage currents; Surface treatment;

fLanguage

English

Publisher

ieee

Conference_Titel

Physical and Failure Analysis of Integrated Circuits (IPFA), 2015 IEEE 22nd International Symposium on the

Conference_Location

Hsinchu

Type

conf

DOI

10.1109/IPFA.2015.7224404

Filename

7224404