DocumentCode
1869168
Title
A study of the Au-Al bonding lifetime for MOSFET devices
Author
Lulu Wang ; Bo Gao ; Lixin Wang
Author_Institution
Inst. of Microelectron., Beijing, China
fYear
2015
fDate
June 29 2015-July 2 2015
Firstpage
366
Lastpage
369
Abstract
As one of the most failure modes for MOSFET devices, the Au-Al failure mode is mainly caused by the Au-Al intermetallic compounds (IMC) growth. The IMC growth makes the bonding strength decrease and the contact resistance increase. In order to study the Au-Al bonding failure mode, the accelerated life tests were conducted, under three temperature conditions - 150°C, 175°C and 200°C. After the tests, the life model was constructed by the Arrhenius model and the bonding lifetime was predicted. Further, the regression of the contact resistance is fitted and studied.
Keywords
MOSFET; aluminium alloys; bonding processes; contact resistance; gold alloys; life testing; Arrhenius model; AuAl; MOSFET devices; accelerated life tests; bonding lifetime; bonding strength; contact resistance; intermetallic compounds growth; temperature 150 degC; temperature 175 degC; temperature 200 degC; Aluminum; Bonding; Compounds; Contact resistance; Gold; Reliability; Wires;
fLanguage
English
Publisher
ieee
Conference_Titel
Physical and Failure Analysis of Integrated Circuits (IPFA), 2015 IEEE 22nd International Symposium on the
Conference_Location
Hsinchu
Type
conf
DOI
10.1109/IPFA.2015.7224408
Filename
7224408
Link To Document