Title :
A study of the Au-Al bonding lifetime for MOSFET devices
Author :
Lulu Wang ; Bo Gao ; Lixin Wang
Author_Institution :
Inst. of Microelectron., Beijing, China
fDate :
June 29 2015-July 2 2015
Abstract :
As one of the most failure modes for MOSFET devices, the Au-Al failure mode is mainly caused by the Au-Al intermetallic compounds (IMC) growth. The IMC growth makes the bonding strength decrease and the contact resistance increase. In order to study the Au-Al bonding failure mode, the accelerated life tests were conducted, under three temperature conditions - 150°C, 175°C and 200°C. After the tests, the life model was constructed by the Arrhenius model and the bonding lifetime was predicted. Further, the regression of the contact resistance is fitted and studied.
Keywords :
MOSFET; aluminium alloys; bonding processes; contact resistance; gold alloys; life testing; Arrhenius model; AuAl; MOSFET devices; accelerated life tests; bonding lifetime; bonding strength; contact resistance; intermetallic compounds growth; temperature 150 degC; temperature 175 degC; temperature 200 degC; Aluminum; Bonding; Compounds; Contact resistance; Gold; Reliability; Wires;
Conference_Titel :
Physical and Failure Analysis of Integrated Circuits (IPFA), 2015 IEEE 22nd International Symposium on the
Conference_Location :
Hsinchu
DOI :
10.1109/IPFA.2015.7224408
